Senin, 28 Mei 2012

Multiphysics Simulations of Tunneling Current Modulation using Ultra-Thin Membranes Micromachined on SOI

B. Bercu, L. Montès, G. Bacles, J. Zimmermann, and P. Morfouli
Institute of Microelectronics, Electromagnetism and Photonics, Grenoble

In this paper, we study a novel type of NEMS - tunnel junctions mounted on thin membranes.

Mechanical stress applied to the junction induces changes in the height and length of the barrier, allowing the modulation of the tunnelling current

Measument of the deformation of an ultra-thin silicon membrane



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